In a certain n-type region of a semiconductor in thermal equilibrium, there is a hole concentration with the following spatial distribution:
po(x)=103(1 9×103x)cm 3 for0 x 10 4 withxincm
Assume that in this region, the electron mobility and hole mobilities are n = 500 cm2/V ·s
and p = 200 cm2/V · s, respectively.
a) Derive an expression for and sketch the hole diffusion current density in this region.
b) Derive an expression for and sketch the hole diffusion velocity in this region.
c) Derive an expression for and sketch the electric field distribution in this region.
d) Derive an expression for and sketch the hole drift velocity in this region.
e) Derive an expression for and sketch the electron concentration in this region.
f) Derive an expression for and sketch the electron diffusion current density in this region.
g) Derive an expression for and sketch the electron diffusion velocity in this region.