The electron binding energy at an oxide trap is found to be leV and the potential barrier height between the Si and the SiO2 film grown on Si is 3.1eV. Electrons are slowly injected by tunneling from Si into a trap in the gate oxide of a MOS transistor when +1V is applied to a 100A-thick oxide film on the Si substrate.
Suppose that the integrated circuit using this MOS transistor will fail when 1011 electron/cm2 are trapped at the oxide electron trap.
How long does it take to fail if there are 1012 cm-2 unoccupied traps initially? What is the maximum applied voltage to the oxide for 10-year life?