Ee 434534 power and rf semiconductor electronics homework


Power and RF Semiconductor Electronics Homework

For circuit simulation, you can use Cadence, LTSpice or PSPICE. For each problem (except Q2), show the simulation results of bandwidth and the quality factor.

Q1. Design a circuit to match a 100 Ω resistance to a 1000 Ω resistance at fo = 100 MHz. Assume that a DC voltage must also be transferred from the source to the load and all elements are perfect or lossless.

Q2. Show the mathematical derivation of Rp = Rs(1+Q2), where Rp, Rs and Q represent the parallel equivalent resistance, series equivalent resistance and quality factor, respectively.

Q3. Using the tap-C method, design a resonant circuit with a loaded Q of 40 at a center frequency of 100 MHz that operates between a source resistance of 100 Ω and a load resistance of 3000 Ω. The capacitors are all lossless and the inductor has a Q of 100 at 100 MHz.

Q4. Using the absorption method, design a matching network to match the source and the load at 50 MHz, as shown in figure below.

13_Figure1.png

Q5. Using the resonance method, design an impedance matching network that will block the flow of DC from the load, as shown in figure below. Assume f = 100 MHz.

1311_Fiugre.png

Q6. Design a T-network that will block DC from the source to the load. Consider the source resistance value of 200 Ω, the load resistance value of 100 Ω and the loaded Q of the network of 30. Assume the operating frequency of 400 MHz.

Q7. Repeat the problem Q6 with a loaded Q value of 3.

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