Consider an ideal n-channel MOSFET with a width-to-length ratio of (W/L) = 10, an electron mobility of µn = 400 cm2/V-s, an oxide thickness of tox = 475 Å, and a threshold voltage of VT = +0.65 V.
(a) Determine the maximum value of source resistance so that the saturation trans conductance gms is reduced by no more than 20 percent from its ideal value when VGs = 5 V.
b) Using the value uf r, calculat in part (a). How much is gms reduced from its ideal value when VGS = 3 V.