Design the driver transistor such that vonbsp 005 v when


The NMOS inverter with depletion load is shown in Figure(a). The bias is VDD = 2.5 V. The transistor parameters are VTND = 0.5 V and VTNL = -1 V. The width-to-length ratio of the load device is W/L = 1.

(a) Design the driver transistor such that vO = 0.05 V when the input is a logic 1.

(b) What is the power dissipated in the circuit when vI = 2.5 V?

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Electrical Engineering: Design the driver transistor such that vonbsp 005 v when
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