1. Consider an ideal metal-semiconductor junction between p-type silicon and polycrystalline aluminum. The Si is doped with N,1=5 x l01 cm·3. The metal work function is 4.28 eV and the Si electron affinity is 4.01 cV. Draw the equilibri um band diagram and detcnninc the barriers hei ght ¢R·
2. Consider the same silicon-aluminum metal-semiconductor junction. The cross-sectional area of the junction 1s 10 µm2. Assume that Be is 30 A K -2 cm-2 and the ideahty factor n is 1. Calculate the reverse saturation current and plot the 1-V curve as a function of applied bias.