Consider a si p-n junction with n-type doping concentration


Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.

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Electrical Engineering: Consider a si p-n junction with n-type doping concentration
Reference No:- TGS0567508

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