A sample of n-type silicon 1cm wide (in the y-direction) and 2mm (in the z-direction) thick is subject to the magnetic field of 0.2T in the +z direction. The current in the sample is 1mA (in the +x direction) and the Hall voltage is around 3 * 10^-4V.
(i) Draw this condition. Comprise the sample, field, current, the charge carriers (supposed to be negative), and the voltmeter.
(ii) Compute the concentration of conduction electrons in the silicon.
(iii) Compute the electron mobility. Silicon consists of a resistivity of 640 Ohm.m at 300K.