For a semiconductor laser diode, it is possible to make an edge-emitting laser be surface emitting at the same time by using second order corrugations on the waveguide and laterally inducing current so the surface of the ri dge is not coated with metal. Consider the far field characteristics of the edge emission given the aperture sizes around 2 µm by 40 µm for the edge. Compare to a surface emission aperture with the same width, but a length of 35 µm. Which one do you expect to have less divergence and what is the beam shape in each case?