1. A (100) Si wafer undergoes the following sequence of oxidation steps: one-hour dry oxidation at 1 100 °C, two-hour wet oxidation at 1000 °C, and one-hour dry oxidation at 1100 °C. Calculate the th i ckness after each oxidation step.
2. Compare the th ickness of silicon d ioxide film grown on (100) Si for wet and dry oxidation at 1100 °C. Compare the two different orientations (100) and (111) Si using the same conditions for wet oxidation.