Q: Estimate the energy band bending from the p-type side to the n-type side in a GaAs abrupt p-n junction with a doping level on the p-type side of NA=2 x 101 7 cm"3 and a doping level on the n-lype side of ND=I x I 017 cm-3 at 300 K.
Q: Calculate the ratio of the depletion region width W under a forward bias of 0.3 V to the equilibrium width W0, for a GaAs abrupt p-n junction with a doping level on the p-type side of NA= 2 x 1017 cm·3 and a doping level on the n-type side of ND=l x 1017 cm-3 at 300 K.