1. Calculate the pinch-off voltage for a silicon nMOSFET with a channel half width of 1.5 µm, and a donor concentration of 2.0x 1015 cm-3, h=12.
2. Calculate In for an enhancement-mode nMOSFET with a length of L=l.3 µm, width of W= l 5 µm, an oxide th ickness of t0 ,=25 nm, and a threshold voltage VT=0.75 V. The drain-source voltage V05=5 V and the gate voltage Yus=3.5 V. Assume zero substrate bias and a mobility of 350 cm2/Vs.