Assignment:
Consider the 2.0micrometer long GaAs device where the E-field is 5kV/cm and Mn*=.067M0.
(a) Calculate the transit time of an electron through the device if the mobility is 8000 cm^2V-s.
(b) The mean free path of an electron (average velocity x scattering time) is the average distance an electron travels between two consecutive scattering events. Calculate the mean free path of a GaAs electron at room temperature.
(c) How does the mobility of a semiconductor depend on T? And why?