Calculate the surface potential at the threshold inversion


Consider an NMOS device with the parameters given in Problem 11.10 Plot V, - - versus r,, over the range

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Problem 11.10

A 400 Å oxide is grown on p-type silicon with Na = 5 x 1015 cm-3. The flat-band voltage is 0.9 V. Calculate the surface potential at the threshold inversion point as well as the threshold voltage assuming negligible oxide charge. Also find the maximum space charge width for this device.

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Physics: Calculate the surface potential at the threshold inversion
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