Calculate the FLAT BAND POTENTIAL and the THRESHOLD VOLTAGE for a real n+ polysilicon / p- silicon MOS diode having Na= 1017 cm^-3 and oxide thickness d = 5 nm. Assume that the oxide has only fixed oxide charges (Qf), whose density is 5x1011 cm^-2. The work function difference as a function of background impurity concentration (Work func. ms) is -1V. The relative dielectric constant of SiO2 is 3.9.