An annealing process shown uses a hot plate operating at an elevated temperature of 635 C. The wafer, initially at a temperature of 28 C, is suddenly positioned at a gap separation of 0.3 mm from the hot plate. The emissivity of both the hot plate and the wafer is 0.63. The silicon wafer has a thickness of 0.74 mm, a density of 2700 kg/m3, and a specific heat of 875 J/kg*K. The thermal conductivity of the gas in the gap is 0.060 W/m*K. The wafer is insulated at the bottom. (a) Calculate the radiative heat flux across the gap. b) Calculate heat flux by conduction across the gap.