Calculate boron updiffusion for different epitaxy conditions

Question

Problem

1. For an n+/n- structure (substrate 10¹⁸ cm^-3, epi 10¹⁵ cm^-3 ), calculate the transition width as a function of epitaxy temperature for a 4µm thick epilayer.

2. Initial wafer doping level is 10¹⁵ cm^-3 phosphorus. Epilayer is boron-doped with 10¹⁷ cm^-3 concentration. Calculate junction depth as a function of growth temperature.

3. If pnp-bipolar transistors are made, the buried layer has to be p-type. Calculate boron updiffusion for different epitaxy conditions when the buried layer doping is 10¹⁸ cm^-3 and epilayer doping is 10¹⁵ cm^-3.

The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.