Assume that electron-hole pairs are injected into n-type GaAs (Eg = 1.42 eV, mc = O.O7m0, mv= 0.5m0,) at a rate R = 1O^23 per cm3 per second. The thermal equilibrium concentration of electrons is n0 = 10^16 cm^3. If the recombination coefficient r = 10^-11 cm^3/s and T = 300 K, determine:
(a) The equilibrium concentration of holes p0.
(b) The recombination lifetime t.
(c) The steady-state excess concentration delta n
(d) The separation between the quasi-Fermi levels Efc - Efv, assuming that T = 0 K