An si device is doped at 510 to the power of 16 cm-3 assume


An Si device is doped at 5*10 to the power of 16 cm-3. Assume that the device can operate up to a temperature where the intrinsic carrier density is less than 10% of the total carrier density. What is upper limit for the device operation?

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Electrical Engineering: An si device is doped at 510 to the power of 16 cm-3 assume
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