A uniformly doped abrupt p-n junction step junction diode, Electrical Engineering

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A uniformly doped abrupt p-n junction step junction diode

A uniformly doped abrupt p-n junction (step junction) diode is fabricated. At room temperature 25% of the total space charge region (depletion region) is in the p region. The built in potential is also measured to be 0.710V. a) Calculate the dopant concentration, b)Size of the space charge region at n side and the p side, c) Calculate the maximum electric filed inside the junction?

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Electrical Engineering: A uniformly doped abrupt p-n junction step junction diode

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