A silicon sample is 85x10^-6 m in length and has a cross-section of 20x10^-6 m x 6x10^-6 m. It has been uniformly doped with Arsenic with a doping density of 4.5x10^15 cm^-3. Assume the temperature is 300K and mobilities are u_n = 1300 cm^2/Vs and u_p = 450 cm^2/Vs.
a. What are the majority and minority carrier concentrations?
b. What is the resistivity of the sample?
c. What is the resistance (end-to-end) of the sample?
d. If one end of the sample is connected to ground and the other end is connected to a +3V supply, what will be the current through the sample?
e. What percentage of the current will be due to minority carriers?
f. What will be the average drift velocity of the majority carriers?