A silicon diode with an area of 100mmacute100mm is doped, Electrical Engineering

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A silicon diode with an area of 100mmacute100mm is doped

A silicon diode with an area of 100mm´100mm is doped withND=2e17cm-3 and NA=1e20cm-3. It has an IS=1fA, nonidealityfactor n=1 and tT=1ns. Consider room temperature of 300 Degree Kelvin. In the calculation below, you should find physicalconstants that might be needed such as q (electron charge), eSi(silicon permittivity), k (Boltzmann's constant) yourself. Indicateyour data source.

a), calculate the build-in potential (φj) of the diode
b), calculate the diode capacitances at a biases of 0V, -10V and+0.7V, respectively .

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Electrical Engineering: A silicon diode with an area of 100mmacute100mm is doped

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Electrical Engineering: A silicon diode with an area of 100mmacute100mm is doped

Reference No:- TGS0630699

Have a Question? (oR Write a Review)

Recent Questions Asked Electrical Engineering

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Request for Solution File

Ask an Expert for Answer!!

Electrical Engineering: A silicon diode with an area of 100mmacute100mm is doped

Reference No:- TGS0630699

Recent Questions Asked Electrical Engineering

Q : The right triangle with vertex p at the origin base b

Q : Design a circuit to multiply two 2-bit numbers -ab and cd

Q : Formulate the problem of finding the minimum cost way of

Q : Should be succinct and to the point describing what the

Q : A silicon diode with an area of 100mmacute100mm is doped

Q : A billiard ball strikes and rebounds from the cushion of a

Q : Levin sdnbhd has fixed operating cost of rm72000 variable

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