a) A silicon diode has a doping profile such that ND = ax3. What is the depth of the junction assuming the p side is uniformly doped with NA per cubic cm. Assume the x origin is at an ideal ohmic contact on the n side of the diode.
b) Sketch the energy band diagram for a Si p/n+ diode doped with NA acceptor and ND donor atoms. Assume both sides are non-degenerate.
c) For the diode in problem 1b, if NA = 1015 and ND =1016 what is the built in potential (numeric value) of the diode?
d) What is the origin of avalanche breakdown in a diode?