A Si IMPATT diode is operated at 140 GHz with a dc bias of 15 V and an average biasing current 150 mA. (a) If the power conversion efficiency is 25% and the thermal resistance of the diode is 4OoCnV, find the junction temperature rise above the room temperature. (b)
If the breakdown voltage increases with temperature at a rate of 40 mV/"C, find the break-down voltage of the diode at room temperature, assuming that the space-charge resistance is 10 C& independent of temperature.