A p-n junction is made by doping Silicon with donors and acceptors. The doping at the p side has a uniform density of NA, but the doping density at the n side is not uniform and changes linearly with the distance from the metallurigical junction. The doping density in the n side can be expressed by:
ND=N0x for 0<=x<=xn
Please find:
1- Electric field in the device (find two equation which express the electric field versus x in the n and p regions)
2- Plot the electric field
3- The maximum electric field
4- The voltage profile in the device (equations)
5- xn,xpandW
6- Cj
Remember that in this case NAxp(not equal)NDxn, but the hatched area under the curves for ND and NA should be the same.