A hall sensor made from silicon is 040 nm thick and has a, Physics

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A hall sensor made from silicon is 040 nm thick and has a

A hall sensor made from silicon is 0.40 nm thick and has a charge carrier density of 2.0 x 10 ^19 m^-3. When it is placed in an unknown perpendicular magnetic field and carries a current of 6.5 mA along its length, a Hall voltage of 120 mV is measured across its width. What is the value of the magnetic field?

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Physics: A hall sensor made from silicon is 040 nm thick and has a

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