1.A Si example is doped with 10^17 As atoms/cm^3, waht is the equilibrium hole concentration at 300K? where is Ef relative to Ei?
2.Estimate the intrinsic carrier concentration of diamond at700K (you can assume that the carrier masses aree similar to those in Si).Compareee the results with those for GaAs and Si. the result illustrates on reson why diamond is useful for high temperature electronics.
3. A GaAs device is dopeed with a donor concentration of 3*10^15 cm^-3, For the device to operate properly, the intrinsic carrier cconcentration must remain less than 5 percent of the total electron concentration. What is the maximun temperature that the device may operate?