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Aan si p-n junction has a1100 cm2 and ndonor1015cm3 on

a) An Si p+-n junction has A=1/100 cm^2 and N(donor)=10^15/cm^3 on the n side. Calculate junction capacitance with reverse bias of 10V.

b) An abrupt p+-n junction is formed in Si with donor doping of Nd=10^15 / cm^3. What is the depletion region thickness W just prior to avalanche breakdown?

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Electrical Engineering: Aan si p-n junction has a1100 cm2 and ndonor1015cm3 on

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a) An Si p+-n junction has A=1/100 cm^2 and N(donor)=10^15/cm^3 on the n side. Calculate junction capacitance with reverse bias of 10V. b) An abrupt p+-n junction is formed in Si with donor doping of Nd=10^15 / cm^3.

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Electrical Engineering: Aan si p-n junction has a1100 cm2 and ndonor1015cm3 on

Reference No:- TGS0614917

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Electrical Engineering: Aan si p-n junction has a1100 cm2 and ndonor1015cm3 on

Reference No:- TGS0614917

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