A a silicon wafer is uniformly doped p-type with na1015, Electrical Engineering

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A a silicon wafer is uniformly doped p-type with na1015

a) A silicon wafer is uniformly doped p-type with Na=10^15 cm-3. At T=0K. What are the equilibrium hole and electron consentrations?
b) A semiconductor is doped with an impurity concentration N such that N>>ni and all the impurities are ionized. Also n-N and p=ni^2/N. Is the impurity a donor or acceptor? Explain
c) The electron concentration in peace of Si at T=300K under equilibrium conditions is 10^5 cm-3. What is the hole concentration?
d) For a silicon sample at T=300K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are hole and electron concentrations?

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Electrical Engineering: A a silicon wafer is uniformly doped p-type with na1015

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Electrical Engineering: A a silicon wafer is uniformly doped p-type with na1015

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Electrical Engineering: A a silicon wafer is uniformly doped p-type with na1015

Reference No:- TGS0619918

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