1 for a semiconductor e vs kx near the band edge ec is, Electrical Engineering

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1 for a semiconductor e vs kx near the band edge ec is

1) For a semiconductor E vs kx near the band edge Ec is given by E=Ec +(h2/16m0)*kx2
Determine the effective mass of electrons in the conduction band. Here m0 is the mass of a free electron.
2) E vs. kx for electrons near the valence band edge Ev can be approximated by
E=Ev-0.1(h2/4m0)*kx2
Find the effective mass of holes in this material.

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Electrical Engineering: 1 for a semiconductor e vs kx near the band edge ec is

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Electrical Engineering: 1 for a semiconductor e vs kx near the band edge ec is

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Electrical Engineering: 1 for a semiconductor e vs kx near the band edge ec is

Reference No:- TGS0624628

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