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1 show that it is possible to have a higher electron conductivity than hole conductivity in a p-type si p-type is
a state-of-the-art npn si transistor has a signal amplifying or electrically active p-type base layer whose volume is
starting with the einstein relationship derive the boltzmann relationship for the equilibrium electron concentration
an n-type si slice of a thickness l is inhomogeneously doped with phosphorus donor whose concentration profile is given
derive the expression that gives the equilibrium electric potential as a function of position in the n-type si slice
show that the fermi energy or fermi potential is spatially constant in the n-type si slice with linearly varying donor
1 the equilibrium electric potential variation in an n-type si slice of thickness l is found to be given by v1x-v0
in principle the equilibrium electric potential variation in problem problem 2 and the equilibrium electric potential
a representative volume element dxdydz of a uniformly doped n-type silicon crystal contains 100 substitutional
1 using only basic physics no algebra and no equations show that at tok efec-ed2 in an n-type semiconductor with
this and the next problem summarize the equation and methodology used by physicists to calculate ndd naa ednbspand
assume that carrier screening from impurity electrons will make the impurity bound state disappear by disregarding the
sketch the potential energy or ecnbspand evnbspas a function of position in a semiconductor crystal which containsa a
1 describe the conditions at which the conductivity is an equilibrium parameter and hence a fundamental property of a
1 is the drift current formulae an equilibrium or nonequilibrium expression2 a current of 1 acm2nbspis forced through
1 if the current density passing through the n-type 1 ohm-cm si bar is increased to 104nbspacm2nbspand
1 demonstrate that the condition of avenging over many scattering events is met using the data and results of the above
1 drive the mobility formulae and its temperature dependence for a neutral scatterer whose scattering cross section is
1 for a crystal of finite size it is found that there are 100 allowed electron energy levels at the energy e1nbspin the
1 when the boltzmann approximation is valid for computing the electron concentration is it also valid for computing the
what is the error in the boltzmann approximation if the crystal size is not infinite but contains 102 103 104 105 106
1 compute the thermal equilibrium constant k of the electron-hole pair generation-recombination reaction in silicon at
1 what is the equilibrium concentration of electrons and holes in an n-type silicon at t212degc ninbsp 10x1010cm-3 in
i need help with doing a 4 slide power point presentation in which i identify important concepts and best practices
a homogeneously impurity doped silicon has ndd101x1016nbspphosphorcm3nbspand naanbsp100x1014nbspboroncm3 all of which