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explain how asymmetric depositions can occur on a wafer in a sputter deposition systemasymmetric deposition means that
what value of n in the arrival angle distribution is desired for good step coverage over a step in topography for good
we have seen how conformal coverage in low pressure systems results from a low sticking coefficient which causes
why might pure chemical etching such as in wet etching be adequate for patterning the silicon nitride layer used to
if the etch anisotropy is 0 what is the undercut or etch bias when etching a 05-pm thick film what is the undercut when
in a certain process it is desired that the pitch of metal lines be equal to or less than 10 microm the pitch equals
what are the advantages and disadvantages of reactive ion etching versus sputter etchingcite a hypothetical example of
it is found that a certain plasma etch chemistry in a certain rie etch system pro-duces vertical sidewalls with zero
what would you expect would happen to the threshold voltage of a mos transistor if the gate oxide were deposited
a 1 x 1014 cm-2 phosphorus implant through a 200-nm sio2 mask layer is performed so the peak concentration is at the
phosphorus is implanted at 50 kev with a dose of 1 x 1014 cm-2calculate the junction depth where the phosphorus meets
an implant machine for 300-mm wafers is required to have a throughput of 60 wafers per hourwhat beam current is
in the ion implantation process positively charged ions impact on the semiconductor surface normally these ions are
an engineer investigating solid-phase epitaxial regrowth after amorphizing ion implants of various species p b si geas
in two separate experiments as and then b are implanted through a thin sio2 layer into the underlying substrateas a
an amorphizing implant is performed using a high dose of arsenic 5 x 105 cm-2 200 kev and tem cross-section images
calculate the change in junction depth for a 40-key boron threshold adjust implant of 5 x 1013 cm-2 annealed at 750degc
the diffusion of a buried antimony layer is only 20 of its normal diffusion in an inert ambient after a phosphorus
a phosphorus implant is performed into a bare p-type silicon wafer with a back-ground doping of 1 x 1015 cm-3 at an
arsenic is implanted into a lightly doped p-type si substrate at an energy of 75 kev the dose is 1 x 1014 cm-2 the si
we want to design an implant step which will implant phosphorus ions through 50 nm of sio2 into an underlying silicon
question at approximately 7 50 pm bells at the train station rang and red lights flashed signaling an express trains
product design a playpen manufacturer wants to make a rectangular enclosure with maximum play area to remain
printing design a printed page is to contain 56 square inches and have a 34 -inch margin at the bottom and 1-inch
question - what is the process of chylomicrons turning into hdl ldl and vldl i think that hdl has a particularly