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advanced mos devices do not follow the square-law behavior expressed by eq 617 a somewhat better approximation iswhere
we wish to design the source follower shown in fig 777 for a voltage gain of 08 if wl 30018 and lambda 0 determine
design the cs stage shown in fig 782 for a voltage gain of 5 and an output impedance of 1 komega bias the transistor so
in the common-source stage depicted in fig 766 the drain current of m1 is defined by the ideal current source i1 and
design the circuit of fig 783 for a voltage gain of 5 and a power budget of 6 mw assume the voltage drop across rs is
an inverting amplifier employs an op amp having an output impedance of rout modeling the op amp as depicted in fig 844
the integrator of fig 851 is used to amplify a sinusoidal input by a factor of 10 if a0 infin and r1c1 10 ns compute
the integrator of fig 851 must provide a pole at no higher than 1 hz if the values of r1 and c1 are limited to 10
an inverting amplifier must provide an input impedance of approximately 10 komega and a nominal gain of 4 if the op amp
an inverting amplifier is designed for a nominal gain of 8 and a gain error of 01 using an op amp that exhibits an
the unity-gain buffer of fig 83 must be designed to drive a 100 omega load with a gain error of 05 determine the
design a noninverting amplifier with a nominal gain of 4 a gain error of 02 and a total resistance of 20 komega assume
1 design an integrator that attenuates input frequencies above 100 khz and exhibits a pole at 100 hz assume the largest
a noninverting amplifier with a nominal gain of 4 senses a sinusoid having a peak amplitude of 05 v if the op amp
an inverting amplifier incorporates an op amp whose frequency response is given by eq 884 determine the transfer
1 explain why dc offsets are not considered a serious issue in differentiators2 explain the effect of op amp offset on
suppose the input differential signal applied to a bipolar differential pair must not change the transconductance and
an adventurous student replaces the nmos source follower in fig 1290 with a pmos common-source stage fig 1291
repeat problem 47 for an order of 6 and compare the results 49 repeat example 1428 but with two khn biquadsproblem 47a
due to a manufacturing error a parasitic resistor rp 2 k has appeared in the inverter of fig 1545 if wl1 3018 and wl2
1 an nmos inverter must drive a load capacitance of 50 ff with an output resetime of 100 ps assuming the risetime is
repeat problem 50 for a nand gateproblem 50a cmos nor gate drives a load capacitance of 20 ff suppose the input
for each nmos section shown in fig 1547 draw the dual pmos section construct the overall cmos gate and determine the
1 a 1-k resistor charges a capacitance of 100 ff from 0 v to vdd determine the energy dissipated in the resistor2 a
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