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Find out Emitter Saturation and Collector Saturation Current

An n-p-n transistor contain the given properties are as follows::

Doping Concentrations: Ne = 1018 cm-3, Nb = 1017 cm-3, Nc = 1015 cm-3. 

Diffusion Coefficients: De = 15cm2s-1, Db = 7cm2s-1, Dc = 5cm2s-1.

Diffusion Lengths: Le = 5 µm, Lb = 10 µm, Lc = 12.5 µm .

 Base Width: Wb = 1µm.

Cross Sectional Area as: A = 2 x 10-4 cm2. And Forward Active Transfer Ratio is as given below: αF = 0.985 as well as Reverse Active Transfer Ratio: αR = 0.5

Find out the Emitter Saturation Current IES and the Collector Saturation Current ICS within the Ebbers-Moll model of such transistor. Therefore evaluate the Emitter, Base and Collector currents IE, IB, IC while the transistor is operating as given conditions:

(a) Within the forward active mode along with VBE = 0.7V as well as VBC = -4.5V

(b) Within the saturation mode along with VBE = 0.725V as well as VBC = 0.655  

Remember that ni = 1.5 x 1010 cm-3 and q = 1.6 x 10-19 C as well asVT = 26 mV.

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