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Find out doping concentration to acquire a barrier potential

A bipolar junction diode is to be fabricated consisting of the p-type material hundred times further heavily doped than the n-type material. Find out the doping concentration needs so as to acquire a barrier potential of V0 = -0.5V on a temperature of 300oK.

If there is: q = 1.6 x 10-19C, VT = kT/q = 26mV @ 3000k, and ni = 1.5 x 1010 cm-3 as well as mn = 1.5 x 103 cm2 V-1 s-1

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