Find out the whole drift current flowing by a piece of homogenous n-type semiconductor, consisting of a uniform cross-sectional area of 5x10-4 cm2 and a doping concentration of 1016 cm-3, within the influence of electric field strength of 2V/cm. Acquire µp = ½ µn.
When there useful terms are as follows:
VT = kT/q = 26mV @ 3000k, mn = 1.5 x 103 cm2 V-1 s-1 and ni = 1.5 x 1010 cm-3 as well as q = 1.6 x 10-19C