A NMO Stransistor is fabricated in the 0.18-μm process whose parameters are given in Table J.1 in Appendix J. The device has a channel length twice the minimum and is operated at VOV = 0.25 V and ID = 10 μA.
(a) What values of gm, ro, and A0 are obtained?
(b) If ID is increased to 100 μA, what do VOV , gm, ro, and A0 become?
(c) If the device is redesigned with a new value of W so that it operates at VOV = 0.25 V for ID = 100 μA, what do gm, ro, and A0 become?
(d) If the redesigned device in (c) is operated at 10 μA, find VOV , gm, ro, and A0.
(e) Which designs and operating conditions produce the lowest and highest values of A0? What are these values? In each of these two cases, ifW/L is held at the same value but L is made 10 times larger, what gains result?