Consider the manufacture of photovoltaic silicon, as described in Problem 1.42. The thin sheet of silicon is pulled from the pool of molten material very slowly and is subjected to an ambient temperature ofToo = 527°C within the growth chamber. A convection coefficient of h = 7.5 W/m2 · K is associated with the exposed surfaces of the silicon sheet when it is inside the growth chamber. Calculate the maxi- mum allowable velocity of the silicon sheet Vsi. The latent heat of fusion for silicon is hsf = 1.8 X 106 J/kg. It can be assumed that the thermal energy released due to solidification is removed by conduc- tion along the sheet.