Find out the whole drift current flowing by a piece of homogenous n-type semiconductor, consisting of a uniform cross-sectional area of 5x10^{-4} cm^{2} and a doping concentration of 10^{16} cm^{-3}, within the influence of electric field strength of 2V/cm. Acquire µ_{p} = ½ µn.
When there useful terms are as follows:
V_{T} = kT/q = 26mV @ 300^{0}k, m_{n} = 1.5 x 10^{3} cm^{2} V^{-1} s^{-1 }and n_{i} = 1.5 x 1010 cm^{-3} as well as q = 1.6 x 10^{-19}C