What is the theoretical maximum etch rate of silicon wafers

Question

Problem

1. Silicon dioxide can sustain 10 MV/cm electric field. Calculate oxide thickness regimes for

(a) CMOS ICs where operating voltages are 1 to 5 V

(b) capillary electrophoresis (CE) microfluidic chips where 500 to 5000 V are used

2. Silicon is etched in plasma according to reaction Si (s) + 2Cl₂ (g) → SiCl₄ (g). What is the theoretical maximum etch rate of a 200 mm diameter silicon wafers when chlorine flow is 100 sccm (standard cubic centimetres per minute)?

The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.