The uniform area density of defects for a cmos fabrication


The (uniform) area density of defects for a CMOS fabrication process is 0.1 cm-2. Estimate the yield for integrated circuits with the following dimension: 4mm x 4mm, 6mm x 8mm, and 9mm x 12mm.

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Electrical Engineering: The uniform area density of defects for a cmos fabrication
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