The selectivity of mooxide is 201 calculate oxide loss as a


Molybdenum etching in Cl2/O2 plasmas results in oxychlorides such as MoOCl4. The etch rate is 300 nm/min, molybdenum film thickness is 300 nm and film non-uniformity and etch process nonuniformity across the wafer are both 5%. The selectivity of Mo:oxide is 20:1. Calculate oxide loss as a function of overetch time.

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Econometrics: The selectivity of mooxide is 201 calculate oxide loss as a
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