The n-type p-type doping levels of a silicon p-n junction


the N-type P-type doping levels of a silicon p-n junction are nd=na= 5x10^16 cm^-3 caltulate the built in voltage Vbi a) at a room temperture b) at 300c c) at 700 c (ni= 1.10x1018 cm^-3) does a negative value for Vbi mean anything ?

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Electrical Engineering: The n-type p-type doping levels of a silicon p-n junction
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