Silicon is doped with 6 x 1015 arsenic atomscm3 a at t300k


Silicon is doped with 6 x 10^15 arsenic atoms/cm^3.
a. At T=300K, what is the percentage increase in free electron concentration from this doping?
b. At the same temperature, does the hole concentration increase or decrease? Why?

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Electrical Engineering: Silicon is doped with 6 x 1015 arsenic atomscm3 a at t300k
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