Discuss the major advanlagcs and disadvanlagcs of ckclron beam lithography.
Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 µm /min. However, this etch process has poor selectivities: selectivity to Si02 is 5, selectivity to photoresist is 2.
(a) Sketch the cross-section after 5 minutes of etching.
(b) Calculate the angle of the Si02 sidewalls after 5 minutes of etching.