Low doped silicon is used in partide detectors, in order to obtain a wide depletio region. Consider a pn junction with p-side doping Na = 5 X 1012 cm-3 and n side doping Nd = 1017 cm ".
(a) What is the thermal equilibrium depletion region width? co
(b) What is the reverse bi as needed to increase the depletion width to 50 um?
(c) if the maximum electric field allowable in the junction is Emax = 5 x l~ V/cm what is the maximum depletion width? What is the bias voltage corresponding to the maximum depletion width?