If non-ideal interface trap density of dit 5x1010cm2ev is, Electrical Engineering

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If non-ideal interface trap density of dit 5x1010cm2ev is

An ideal MOSFET on a p-type silicon substrate has an oxide thickness of 0.1m and a dielectric constant K0 = 4 with the p-type Si doped to a concentration of 1016cm-3. Assume NV = 1x1019/cm3, NC = 2.8x1019/cm3

If non-ideal interface trap density of Dit = 5x1010/cm2/eV is to be considered, what is the shift in the flat band voltage? Assuming all interface traps are acceptor-like (negatively charged if filled with an electron and neutral if empty)

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Electrical Engineering: If non-ideal interface trap density of dit 5x1010cm2ev is

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Electrical Engineering: If non-ideal interface trap density of dit 5x1010cm2ev is

Reference No:- TGS0601346

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Electrical Engineering: If non-ideal interface trap density of dit 5x1010cm2ev is

Reference No:- TGS0601346

Recent Questions Asked Electrical Engineering

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