If a silicon diffusion is doped with phosphorus donors at a


If a silicon diffusion is doped with phosphorus (donors) at a concentration of 0.6 x 10^17/cm^3, what is the concentration of holes in this piece of silicon per cm^3? Assume ni = 1.45 x 10^10/cm^3, ?n = 1000 cm^2/V-s, ?p = 400 cm^2/V-s

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Electrical Engineering: If a silicon diffusion is doped with phosphorus donors at a
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