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If a silicon diffusion is doped with phosphorus donors at a

If a silicon diffusion is doped with phosphorus (donors) at a concentration of 1.0 x 10^16/cm^3, and has a sheet resistance of 365.7 ohm/cm^2 square, what is the thickness of the diffusion in microns? Assume ni = 1.45 x 10^10/cm^3, n = 1000 cm^2/V-s, ?p = 400 cm^2/V-s

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Electrical Engineering: If a silicon diffusion is doped with phosphorus donors at a

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If a silicon diffusion is doped with phosphorus (donors) at a concentration of 1.0 x 10^16/cm^3, and has a sheet resistance of 365.7 ohm/cm^2 square, what is the thickness of the diffusion in microns

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Electrical Engineering: If a silicon diffusion is doped with phosphorus donors at a

Reference No:- TGS0589890

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Recent Questions Asked Electrical Engineering

Q : The excitation branch impedances are given referred to the

Q : A person pushes horizontally with a force of 220 n on a 66

Q : Write balanced equations of toulene isopropylbenzene

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Electrical Engineering: If a silicon diffusion is doped with phosphorus donors at a

Reference No:- TGS0589890

Recent Questions Asked Electrical Engineering

Q : The excitation branch impedances are given referred to the

Q : A person pushes horizontally with a force of 220 n on a 66

Q : Write balanced equations of toulene isopropylbenzene

Q : Since there is excess capacity the constraint is in the

Q : If a silicon diffusion is doped with phosphorus donors at a

Q : Recent research on the solubility of greenockite a

Q : How does vaccine distribution relate to key operations and

Q : Consider a continuous-time lti system with frequency

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