Given: Si is doped with boron atoms; concentration of boron atoms is 1014 cm-3.
· Find: carrier concentration in Si at T = 300 K. (Hint: use Principle of Space Charge Neutrality)
· Find: Ei - position of Fermi level in intrinsic Si at T = 300 K.
· Find: (EF - Ei) - position of Fermi level with respect to Ei in the given boron-doped Si at T = 300 K.